PART |
Description |
Maker |
XAL1010-102ME XAL1010-103ME XAL1010-152ME XAL1010- |
High Temperature Shielded Power Inductors
|
Coilcraft lnc.
|
0676432990 |
Universal Serial Bus (USB) Shielded I/O Receptacle, Right Angle, Type A, High-Temperature Black Nylon, Gold (Au) Flash, PCB Thickness 1.60mm (.063"), with Upper
|
Molex Electronics Ltd.
|
0676431931 67643-1931 |
Universal Serial Bus (USB) Shielded I/O Receptacle, Right Angle, Type A, High-Temperature White Nylon, 0.76μm (30μ) Gold (Au) Plating, PCB Thickness 1.20mm (.047)
|
Molex Electronics Ltd.
|
2741T 2741S |
T1/E1 Transformer Shielded HIGH FREQUENCY MAGNETICS T1/E1 Through Hole Shielded Transformers
|
BEL[Bel Fuse Inc.]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
GL195A |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc.
|